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December 16, 1996
Hitachi, Ltd. has developed these series of 64-Mbit synchronous DRAMs that operate at 100MHz operation and provide a high data transfer speed of 200 Mbytes per second in x 16-bit configuration, for main memory and high-speed image processing applications in workstations and personal computers. In Japan, sample shipments of the HM5264405 ( 16M x 4) will begin in January 1997, and will be followed by the HM5264805( 8M x 8) in April and the HM5264165 ( 4M x 16) in June.Hitachi has also developed and is releasing the 7 series of 64-Mbit SDRAM modules. The HB526C1672EN, HB526C1664EN and HB526C864EN 168-pin unbuffered Dual Inline Memory Module (DIMM), and the HB526C1672E and HB526C872E 168-pin buffered DIMMs are for desktop PCs, and the 144-pin Small Outline (SO) HB526A864DB and HB526A464DB DIMMs are for notebook PCs. Sample shipments of these memory modules will begin from second quarter of 1997 in Japan.
The increasingly high performance of workstations and personal computers has been paralleled by an increase in system clock frequencies. And in the field of video memory, data transfer speeds have risen in line with higher display resolutions and advances in high-speed image processing technologies such as MPEG2*. At the same time, high-speed applications require a large main memory capacity.
Synchronous DRAM meets these needs by performing input/output operations in synchronization with a clock signal, and the ease with which high-speed operation can be achieved in synchronization with the system clock has led to a rapid increase in the use of this kind of memory. Hitachi already has 4- and 16-Mbit synchronous DRAMs in volume production, which are used as video memory in products such as game machines, personal computers and Hi-Vision TVs, and also as main memory in mainframe computers and workstations.
To meet the demand for faster and larger memories for PCs and for MPEG2 and other high-speed image processing applications, Hitachi developed the HM5264405/805/165 series of 64-Mbit synchronous DRAMs. Use of the latest 0.3-micron CMOS process technology and 3-stage pipelining enables the HM5264405/805/165 series to achieve the large capacity of 64 Mbits and high-speed operation synchronized with a 100 MHz clock. The new memories have a 4-bank configuration. Support for a 6-bit configuration has enabled the data transfer speed to be increased to a maximum of 200 Mbytes per second, making these synchronous DRAMs suitable for MPEG2 and similar image processing applications in which large volumes of data are processed at high speed. The new memories are mounted in 54-pin 400 mil TSOP-II packages and conform to JEDEC (Joint Electron Device Engineering Council) standard specifications.
Future plans to meet constantly evolving market needs include the development of SOJ and other package versions, and 125 MHz-plus ultra-high-speed versions featuring 4-stage pipelining and small-amplitude interface (SSTL 3) support, as well as research into the development of 256-Mbit capacity and use of a x 32 bit configuration and an 8-bank configuration.
[Note]
MPEG2 (Moving Picture Experts Group Phase 2): An international standard for moving picture compression and expansion technology.
[Applications]
1. 64-Mbit SDRAMs
Mainframe computers, workstations, personal computers2. SDRAM Modules
168-pin DIMM : workstations, personal computers
144-pin SO DIMM: notebook PCs[Sample Pricing in Japan]
- 64-Mbit SDRAMs
Product Bit configuration Sample price
(yen)HM5264405TT 16Mx4x4Bank 16,000 HM5264805TT 8Mx8x4Bank 16,000 HM5264165TT 4Mx16x4Bank 16,000 - SDRAM Modules
Product Bit configuration Sample price
(yen)168-pin
unbuffered
DIMMHB526C1672EN 16Mx72 313,200 HB526C1664EN 16Mx64 278,400 HB526C864EN 8Mx64 139,200 168-pin
buffered
DIMMHB526C1672E 16Mx72 316,800 HB526C872E 8Mx72 158,400 144-pin
SO DIMMHB526A864DB 8Mx64 139,200 HB526A464DB 4Mx64 69,600 [Specifications]
- 64-Mbit SDRAMs
Item HM5264405TT HM5264805TT HM5264165TT Bit configuration 16M word x 4 bit 8M word x 8 bit 4M word x 16bit Voltage 3.3V+/-0.3V Interface LVTTL Burst length 1 / 2 / 4 / 8 FULL Burst modes Sequential/Interleaved Clock frequency 83/100 MHz Access time
tACCL=3:8/10ns CL=2:9/13ns Set up/Hold 2ns/1ns Functions Burst stop Burst read/write Single read/write Auto-precharge Clock suspend DQM control Self-/Auto-refreshing Process 0.3 micron CMOS process Package 54-pin 400mil TSOP-II - SDRAM Modules
(1) 168-pin 8-byte DIMM
Item HB526C1672EN HB526C1664EN HB526C864EN HB526C1672E HB526C872E Bit configuration 16M word x 72 bit 16M word x 64 bit 8M word x 64bit 16M word x 72 bit 8M word x 72 bit Buffer Unbuffered Buffered Power supply 3.3V+/-0.3V Burst length 1 / 2 / 4 / 8 FULL Burst modes Sequential/Interleaved Clock frequency 83/100 MHz Access time
tACCL=3:8/10ns CL=3:10/12ns CL=2:9/13ns CL=2:11/15ns Set up/Hold 2ns/1ns Functions Burst stop Burst read/write Single read/write Auto-precharge Clock suspend DQM control Self-/Auto-refreshing Package size 133.35mm x 31.75mm x 2.92mm 133.35mm x 44.45mm x 2.92mm (2) 144-pin SO DIMM
Item HB526A864DB HB526A464DB Bit configuration 8M word x 64 bit 4M word x 64 bit Power supply voltage 3.3V+/-0.3V Burst length 1 / 2 / 4 / 8 FULL Burst modes Sequential/Interleaved Clock frequency 83/100 MHz Access time
tACCL=3:8/10ns CL=2:9/13ns Set up/Hold 2ns/1ns Functions Burst stop Burst read/write Single read/write Auto-precharge Clock suspend DQM control Self-/Auto-refreshing Package size 67.6mm x 31.75mm x 3.80mm