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March 3, 1998

Hitachi to Market a New Semiconductor Ultra-thin Film Evaluation System Featuring High Sample Throughput and High Image Contrast

- Nanometer observation with a user-friendly operating design -

By developing an electron optical system that achieves outstanding image brightness at its 0.4 nm (nanometer) resolution, Hitachi, Ltd. has made possible high contrast image observation of insulating films such as thin film oxide in gate areas of semiconductor devices. The HD- 2000 has high sensitivity in elemental analysis 2 times better than the conventional TEM method. As such, it is a powerful tool for development and analysis of advanced semiconductor devices and other advanced materials.

Semiconductor devices are moving toward higher circuit integration and density with smaller features sizes as well as higher performance. For development and failure analysis of these advanced devices, high magnification observation of fine structures as well as high sensitivity elemental analysis of small particles have become important not only for R & D but also for quality control in production lines.

Until now, high resolution SEMs have been mainly used for observation and analysis of semiconductor devices. When the design rules move from 0.25 to 0.18 to 0.13 micrometers or even smaller, gate oxide thickness will be reduced down to a few nm. Fine process control on the order of 1 nm will be required. It is difficult for high resolution SEMs to make such small objects clearly visible for device designers and process engineers.

Although TEMs are well known for their high resolution capability and have already been used for observation of semiconductor devices in laboratories, TEMs are basically laboratory instruments and require skilled operators. These instruments also require delicate and time-consuming sample preparations which also require experienced technicians. It takes a couple of days to produce pictures of the area of interest. This makes TEMs unacceptable for most semiconductor fabs.

In the HD-2000, samples are illuminated by a powerful beam of electrons. After passing through the sample, these electrons enter a high sensitivity sensor where they are converted to a digital image for display on a monitor screen. Electronically recorded digital images allow direct measurement of key parameters on the screen. The images can be processed or transmitted through a network to anywhere they are needed.

For quick and accurate sample preparation, a separate focused ion beam system is also available. It can process a sample of interest mounted on a compatible holder at a thickness of 0.1 micrometers about a point of interest within 3-4 hours. This compatible holder can be positioned in the HD-2000 without remounting the prepared samples so that observation and analysis can be done most efficiently and without help of experienced engineers. In addition, it is quick to produce results.

It takes about 4-5 hours to produce pictures and/or analysis from wafer samples. This is 20 to 30 times quicker than the conventional TEM method.

Price and delivery

Product name	Price	Shipment
HD-2000	160 million yen	August 1998

Features

(1) Simple operation, high contrast and high resolution image observation.

1) Direct image observation on a viewing monitor screen at a resolution of 0.4 nm.

2) Operation, observation and image recording are all possible in normal lighting conditions. No darkroom facility is required.

3) Insulating film samples such as gate oxide of a semiconductor device can be observed at high contrast.

4) Thin film structures can be directly measured on the order of nanometers.

(2) Enhanced elemental analysis capability

1) High sensitivity elemental analysis from small nanometer regions of interest is possible.

2) The HD-2000 and an X-ray analyzer can be integrated and operated using a single keyboard/mouse control.

(3) High speed image handling

1) The HD-2000 produces digital images which can be quickly processed, transmitted, filed, and printed. It allows direct measurement of key parameters of samples and necessary comments can be input on images.

(4) High speed sample preparation

1) Sample holders of the HD-2000 are compatible with FIB (focused ion beam system) for quick and accurate sample preparation.

2) The targeted area of samples can be monitored using the secondary electron image of the HD-2000 for precise milling on the FIB.

3) High resolution observation and elemental analysis of delicate samples such as compound and fragile materials can be done quickly and easily with minimum operator training and experience.

Specifications

Sample size:	4 mm x 0.5 mm x 0.6 mm (or 3 mm dia.)
Resolution:	0.4 nm Accelerating voltage: 200 kV
Magnification:	X100 - X2,000,000
Size of main unit:	105 cm(W) x 142 cm(D) x 190 cm(H)

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