Hitachi, Ltd. (NYSE:HIT) today announced the HVC135 Series of PIN diodes for antenna
switch use in PDC and GSM digital cellular phones, and multimedia tuner*1 source
switching. Use of Hitachi's proprietary trench process*2 has resulted in forward resistance
and capacitance figures ranking among the industry's lowest level. Sample shipments of the
first two products in the series-the HVC135 and HVC136-will begin in March 1999 in
Japan.
Compared with Hitachi's previous HVC131 product, the HVC135 has an approximately
35% lower forward resistance of 1.3ohm (typ.) in the 2 mA low-current region, and an
approximately 15% lower inter-pin capacitance of 0.47 pF (typ.), for lower power
consumption and higher performance of antenna switch circuits.
The rapid advances being made in the areas of size reduction, lower power consumption,
higher frequencies, and multi-band capability in products such as digital cellular phones have
brought a variety of demands relating to the PIN diodes used in antenna switches, including
low-current operation, low transmission/reception power loss, small inter-pin capacitance
and minimal signal leakage, as well as the absence of major variations in impedance even at
high frequencies.
The new HVC135 Series is the first Hitachi diode series to employ the trench process,
enabling the trade-off characteristics of forward resistance and capacitance to be reduced
simultaneously. In the 2 mA low-current region, the forward resistance specification is 1.3
ohm (typ.) for the HVC135 and 1.6ohm (typ.) for the HVC136, and the capacitance
specification is 0.47 pF (typ.) for the HVC135 and 0.32 pF (typ.) for the HVC136-figures
that rank among the best in the industry. These specifications make it possible to improve
transmission/reception isolation characteristics and loss in antenna switch circuits, and to
improve impedance and achieve stability in the high-frequency region. In addition, use of
Hitachi's super shallow PN junction process*3 offers an extremely small degree of deviation
and ensures uniformity in electrical characteristics. These products also feature a high
electrostatic discharge protection level of 400 V or more under EIAJ standard conditions
(200 pF, 0 ohm), eliminating the need for special protective circuitry or parts.
The package used is a UFP (Hitachi package code) ultra-miniature resin package for surface
mounting.
In the future, Hitachi plans to extend the HVC135 Series lineup with the HVC137, featuring
even lower forward resistance and capacitance specifications, for the next generation of
cellular phones.
Notes: 1. Multimedia tuner: A tuner compatible with personal computers, etc., capable
of broadcast media reception (BS/CS, TV, FM/AM, etc.)
2. Trench process: A structure and process in which a trench is formed around a
junction by means of chemical etching, and prevent the depletion layer for
expanding laterally that functions as a capacitor is isolated.
3. Super shallow PN junction process: A diode PN junction process developed by
Hitachi. A submicron junction depth is achieved by use of a low temperature and
impurity density optimization during junction formation.
< Typical Applications >
- Digital cellular phones
- Multimedia tuner source switching
<Prices in Japan>
Product Code Sample Price (Yen)
HVC13 15
HVC136 15
1. Absolute Maximum Ratings (Ta=25 degrees Celsius) HVC135, HVC136
Item Symbol Value Unit
Peak reverse voltage VRM 65 V
Reverse voltage VR 60 V
Forward current IF 100 mA
Power dissipation Pd 150 mW
Junction temperature Tj 125 degrees Celsius
Storage temperature Tstg -55 to +125 degrees Celsius
2.Electrical Characteristics (Ta=25 degrees Celsius)
Item Symbol Max Unit Test Condition
HVC135 HVC136
Reverse current IR 0.1 0.1 micronA VR=60V
Forward voltage VF 1.0 1.0 V IF=10mA
Capacitance C 0.6 0.45 pF VR=1V,f=1MHz
Forward resistance rf 1.5 2.0 - IF=2mA,f=100MHz
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