Hitachi, Ltd.(TSE:6501) today announced the release of three 256-Mbit synchronous DRAMs
(SDRAMs). The HM5225405BTT series (with a 4-bit organization), the HM5225805BTT
series (with an 8-bit organization), and the HM5225165BTT series (with a 16-bit
organization), are designed for use as main memory in servers and workstations. Sample
shipments will begin in August 1999 in Japan. These SDRAMs support 133MHz memory
bus systems (PC133), and reduce about 55% the power consumption of four of Hitachi's 64-
Mbit SDRAMs.
Hitachi also announced the release of two memory modules based on these SDRAMs. The
HB52RF1289E2 series is the industry's highest density 1-GB 168-pin DIMM, and has a 72-
bit organization with resister. The HB52F649E1 series is a 512-MB 168-pin DIMM, and has
a 72-bit organization with resister. These two DIMMs also support 133MHz memory bus
systems(PC133).
One aspect of the recent increased performance of workstations, servers, and other
information-processing equipment has been an increase in the density of memory.
So Hitachi has developed the three 256-Mbit SDRAMs and 1-GB/ 512-MB DIMMs which
support PC133. By using a 0.18-um CMOS fabrication process, the HM5225405BTT series,
the HM5225805BTT series, and the HM5225165BTT series achieve 256-Mbit large capacity
and high speed operation.
These new products reduce the burst current (Icc4) of 280mA in the case of four 64-Mbit
SDRAMs supporting for PC133 to 130mA. These products are 54-pin 400-mil TSOP-II
package, as the 64-Mbit SDRAM.
The 1-GB and 512-MB memory modules also being released use these SDRAMs and 168-pin
DIMMs that support 133-MHz memory bus systems. Hitachi realizes high density 1-GB
SDRAM module by using Hitachi stacked TCP mounting technology in which TCP packages
are stacked in two layers.
The 1-GB DIMM has a 128-Mword x 72-bit (2 banks) organization to support ECC*. This
module uses thirty-six of the HM5225405BTB(TCP) 4-bit organization SDRAM chips on the
printed circuit board. The 512-MB DIMM has a 64-Mword x 72-bit (1 bank) organization to
support ECC. This module uses eighteen of the HM5225405BTT(TSOP) 4-bit organization
SDRAM chips on the printed circuit board.
Note * ECC (error checking and correction): Functions that both check for errors that occur in
memory data and correct those errors.
<Application Product Examples>
Main memory in servers, workstations, and other computer systems (133-MHz memory bus
systems)
<Sample pricing in Japan (Yen)>
256-Mbit Synchronous DRAM
Catalog No. Organization Sample price(yen)
HM5225405BTT-75 16M x 4 bits x 4 banks 24,000
HM5225805BTT-75 8M x 8 bits x 4 banks 24,000
HM5225165BTT-75 4M x 16 bits x 4 banks 24,000
1-Gbyte/ 512-Mbyte DIMM
Catalog No. Organization Sample price(yen)
HB52RF1289E2-75B 128M x 72bit 1,000,000
HB52F649E1-75B 64M x 72bit 440,000
<Specifications>
1. 256-Mbit Synchronous DRAM
Item HM5225405BTT-75 HM5225805BTT-75 HM5225165BTT-75
Memory 16 Mword x 4 bits x 4 8 Mwords x 8 bits x 4 Mwords x 16 bits x
organization banks 8 Mwords x 8 bits x 4 banks
External power- 3.3 V +/- 0.3 V 3.3 V +/- 0.3 V 3.3 V +/- 0.3 V
supply voltage
High-speed modes Programmable burst lengths (2, 4, 8)
Memory bus 133 MHz 133 MHz 133 MHz
frequency
Access time (tAC) 5.4ns(CL=3) 5.4ns(CL=3) 5.4ns(CL=3)
Process 0.18-um CMOS 0.18-um CMOS 0.18-um CMOS
process process process
Package 54-pin 400-mil TSOP- 54-pin 400-mil 54-pin 400-mil
II TSOP-II TSOP-II
2. 1-Gbyte/ 512-Mbyte DIMM
Item HB52RF1289E2-75B HB52F649E1-75B
Memory organization 128 Mwords x 72 bits 64 Mwords x 72 bits
Bank Organization 2 banks 1 bank
External power-supply 3.3V +/- 0.3V 3.3V +/- 0.3V
voltage
Mounted SDRAM 16M x 4 x 4 16M x 4 x 4
specification 36 SDRAMs (TCP) 18 SDRAMs (TSOP)
Memory bus frequency 133MHz 133MHz
CAS latency CL=3 CL=3
Package 168-pin DIMM (Dual In-line 168-pin DIMM (Dual In-line
Memory Module) Memory Module)
133.37mm x 38.1 x 4.80mm 133.37mm x 43.18 x 4.00mm
Buffer PLL+Resister type PLL+Resister type
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