Hitachi, Ltd. (TSE: 6501) today announced the HB52R2569E2 (x72-bit configuration, with 
register) of synchronous DRAM (SDRAM) module, containing seventy-two 256-Mbit 
SDRAMs to provide an industry-first 2-Gbyte capacity, for use as main memory in 
workstations and servers.  Sample shipments will begin in October 1999 in Japan.  This 
product supports 100 MHz memory bus 168-pin DIMM (dual in-line memory modules) 
designed for greater system capacity and smaller size.

With the increasing performance and storage capacity of workstations, servers, and similar 
systems, there is a continuing trend toward larger-capacity memory devices for installation in 
these systems.  In line with this trend, greater capacity is also being demanded of DIMMs as a 
means of achieving high-density mounting.  Hitachi has previously released 1-Gbyte DIMMs 
employing proprietary TCP stacked-mounting technology with two TCP layers.  Now, to 
meet the demand for even greater capacity, Hitachi has developed the HB52R2569E2 of 
DIMM, offering the industry's first capacity of 2-Gbytes.

This product employs a 256-Mword x 72-bit configuration with ECC* support, suitable for 
use in workstation and server applications, with seventy-two 256-Mbit SDRAMs (TCPs) 
mounted on a printed circuit board.  The component 256-Mbit SDRAMs use a 0.18 micro meter 
process and leading-edge memory cell technology to achieve a combination of high speed.  
This has made it possible to support a 100 MHz memory bus with 2-Gbyte DIMMs.

Hitachi's 2-Gbyte DIMM provides twice the density of the 1-Gbyte model within the same 
size standard footprint.

Future plans include an extension of the product lineup to include models capable of 
supporting a 133 MHz memory bus.

Note:	ECC (Error Checking and Correction): A function that checks for, and corrects, data 
            errors in memory.



< Typical Applications >
Main memory in workstations, servers, etc. (Supporting 100 MHz memory bus)

< Prices in Japan > (For Reference Only)
Product Code		Configuration		Sample Price (Yen)
HB52R2569E2		256 Mwords x 72 bits	2,000,000         

< Specifications >
Item			HB52R2569E2-A6B		HB52R2569E2-B6B  
Memory configuration		256 Mwords x 72 bits             
External power supply 		3.3 V x 0.3 V
voltage                                                          
Memory bus frequency		100 MHz                          
CAS latency			2/3			3        
Package			168-pin DIMM (dual in-line memory module)
			133.37 mm x 53.34 mm x 4.80 mm           
Buffering		Buffer provided (PLL + register type)