Hitachi, Ltd. (TSE: 6501) today announced the HM5512182FBT 144-Mbit direct Rambus 
DRAM (RDRAM(R)*1), together with two 184-pin memory modules (RIMMs(TM)*2) incorporating 
HM5512182FBT RDRAMs-the 288-Mbyte HB55A256ARR and the 144-Mbyte 
HB55A128ARP-for use as main memory in servers, workstations, and PCs.  Sample shipments 
of the 144-Mbit RDRAM will begin in November 1999, and sample shipments of the RIMMs in 
December.

Hitachi also announced the HM5512162FBT 128-Mbit direct RDRAM with no ECC function*3.  
Sample shipments of this model will begin in March 2000.

The use of PCs, workstations, and servers in Internet and other network systems and moving 
picture applications has brought a need for faster processing of large quantities of data.  The 
memory installed in these devices must offer not only greater capacity, but also faster data transfer 
between the memory controller and DRAM in order to achieve high-speed processing.

In response to this demand, Hitachi has developed direct RDRAM and RIMM products achieving 
a high data transfer speed of 1.6 Gbytes/sec.

The new products of the 144-Mbit HM5512182FBT and the 128-Mbit HM5512162FBT use a 
0.18micro meter CMOS process, and achieve a data transfer frequency of 800 MHz (an operating 
frequency of 400 MHz) with the industry's smallest chip size.  They include a direct RDRAM 
interface and perform data input/output in synchronization with the rising and falling edges of an 
external clock, enabling a transfer speed of 800 Mbits/sec per pin to be achieved.  This gives a fast 
data transfer speed of 1.6 Gbytes/sec per chip.  Bank switching is performed by means of 4-bank 
interleaved operation, making possible a 1.6 Gbytes/sec transfer speed while improving random 
access performance.

Products offering data transfer frequencies of 711 MHz and 600 MHz are also available.

Moreover, Hitachi realizes 1.5 W (Typ.) low power consumption by implementing optimum 
circuit design.

The power supply voltage is 2.5 V +/- 0.13 V, and a 0.8 V small- amplitude RSL*4 is used in the 
interface to achieve high-speed operation.

The 144-Mbit HM5512182FBT has a 256-kword x 18-bit x 32-bank configuration, and is for use 
in memory systems with an ECC function.  Of the two RIMMs incorporating HM5512182FBT 
RDRAMs, the 288-Mbyte HB55A256ARR has a 128-Mword x 18-bit (256-kword x512-bank x 
18-bit) configuration, while the 144-Mbyte HB55A128ARP has a 64-Mword x 18-bit (256-kword 
x 256-bank x 18-bit) configuration.

The 128-Mbit HM5512162FBT, with a 256-kword x 16-bit x 32-bank configuration, is for use in 
memory systems with no ECC function.

The package is a 54-pin BGA package. 

Notes:	1.	Rambus and RDRAM are registered trademarks of Rambus Inc.
	2.	RIMM(TM): Rambus Inline Memory Module.  RIMM is a trademark of Rambus Inc.
	3. 	ECC: Error Checking and Correcting.  A function that checks for and corrects data
            	errors in memory.
	4.	RSL: Rambus Signal Level

< Typical Applications >
PCs, servers, workstations, etc.

< Prices in Japan > (For Reference Only)
144-/128-Mbit Direct Rambus DRAMs

				Max. Data
				Transfer				Sample Price
Product Code			Frequency	Configuration		(Yen)		
144-Mbit 	HM5512182FBT	800 MHz		256 k x 18 x 32		12,000
models		Series									
				711 MHz 				11,000		
				600 MHz					10,000		
128-Mbit 	HM5512162FBT	800 MHz		256 k x 16 x 32		10,000
models		Series									
				711 MHz 				9,000		
				600 MHz					8,000		




288-/144-Mbyte Memory Modules

				Max. Data 
				Transfer 				Sample Price
Product Code			Frequency	Configuration		(Yen) 		
288-Mbyte 	HB55A256ARR	800 MHz		128 M x 18		240,000
models		Series									
				711 MHz 	(256 k x 512 x 18)	220,000		
				600 MHz					200,000		
144-Mbyte 	HB55A128ARP	800 MHz		64 M x 18		120,000
models		Series									
						        711 MHz               (256 k x 256 x 18)                 110,000		
						        600 MHz					                         100,000