Hitachi, Ltd. (TSE: 6501) today announced the HAT1048R, HAT1051T, and HAT1054R 
P-channel power MOS FETs, featuring an on-resistance only half that of previous Hitachi 
models, for use as power management switches and overcharge/discharge protection 
circuit switches in notebook PCs and similar portable information products.  Sample 
shipments of HAT1048R/HAT1054R and HAT1051T will begin on February 28 and 
March 31 2000 in Japan.

These products allow a single chip to be used in systems that previously required two 
chips in parallel, making it possible to create smaller systems with fewer parts.  Of the 
three new models, the HAT1048R achieves a low on-resistance of 5.5m ohm (typ.) at a -30 
V breakdown voltage-the industry's highest performance for an SOP-8 (Hitachi package 
code) small surface-mount package-enabling systems to be made smaller while offering 
energy-saving features.

Portable information products such as notebook PCs are equipped with power 
management or similar functions to provide longer operation on battery power, and P-
channel power MOS FETs, which allow the drive circuitry to be simplified, are used as 
power control switches for this purpose.  At the same time, the increasing power 
consumption of MPUs in recent years has brought a demand for a  much lower on-
resistance of these power MOS FETs.

In the new HAT1048R, HAT1051T, and HAT1054R, a cell density 2.5 times that of 
previous products has been achieved through the use of a 0.5um process, and cell 
structure optimization has been implemented to achieve a lower on-resistance 
characteristic, resulting in a 50% lower on-resistance per unit chip area than previous 
Hitachi products.

The HAT1048R has -30 V breakdown voltage, 4.5 V drive capability, and offers a low 
on-resistance of 5.5m ohm (typ., at 10 V drive), the industry's highest performance for an 
SOP-8.  The HAT1051T has -30 V breakdown voltage, 4.5 V drive capability, employs a 
TSSOP-8 (Hitachi package code) thin type package, and offers an on-resistance of 12m
 ohm (typ., at 10 V drive).  The HAT1054R, which comes in the form of two devices 
mounted in an SOP-8 package, has -20 V breakdown voltage, 2.5 V drive capability, and 
an on-resistance of 24m ohm (typ., at 4.5 V drive).

Future plans include the development of various products offering different breakdown 
voltages and packages, suitable for a wide range of applications including small motor 
drive and automotive equipment.

< Typical Applications >
Power control (power management) switches for notebook PCs and similar portable 
information products
Smart battery protection circuits

< Prices in Japan >	(For Reference)
Part Number	Package		Type				Sample Price (Yen)
HAT1048R	SOP-8		P-channel FET (1 device)	150		
HAT1051T	TSSOP-8		P-channel FET (1 device)	110		
HAT1054R	SOP-8		P-channel FET (2 devices)	110		

< Specifications >