Hitachi, Ltd. (TSE: 6501) today announced the HAT1058C and HAT1059C small, ultra-
thin MOS FETs featuring a low on-resistance*1, for use as power management switches 
in small portable products such as mobile phones.  Sample shipments will begin on 
January 26, 2001 in Japan.

The newly developed CMFPAK-6 (Hitachi package code) used for these new products 
features a thickness of only 0.8 mm(max.) and requires only approximately half the 
mounting area of the previous TSOP-6 (Hitachi package code) package.

In addition, Hitachi's latest 0.5 µm power MOS FET process*2 provides the 
industry's lowest on-resistance of 56 mili-ohm (typ.) at a withstand voltage of -20 V 
or 40 mili-ohm (typ.) at a withstand voltage of -12 V for power MOS FETs using the 
CMFPAK-6 package, for smaller end-products with a longer battery life.

[Background]
Reducing the size and weight of portable products such as mobile phones and digital 
still cameras that use batteries as their main power supply, while extending their 
operating time, requires the power MOS FETs used as power management switches to be 
made smaller, lighter, and thinner, with lower loss characteristics.  To meet these 
needs, Hitachi is now releasing the HAT1058C and HAT1059C featuring significantly 
smaller dimensions (package size: 2.0 mm x 2.1 mm (typ.), thickness: 0.8 mm (max.)) 
and lower on-resistance than power MOS FETs currently in mass production that use 
the small, thin TSOP-6 package (package size: 2.8 mm x 2.95 mm(typ.), thickness: 
1.1 mm (max.)).

[About these Products]
The CMFPAK-6 package is of the flat-lead type, with the lower part of the package 
body and leads arranged in a flat configuration, enabling the leads to be made 
shorter and the thickness of the package resin to be reduced.
The use of Hitachi's latest 0.5 µm power MOS FET process has made it possible to 
produce a smaller chip with low on-resistance.  The HAT1058C  -20 V withstand voltage 
P-channel power MOS FET features the same 56 mili-ohm (typ.) on-resistance as Hitachi's 
previous HAT1043M TSOP-6 package product while requiring only approximately half the 
mounting area, and the HAT1059C, with a withstand voltage of -12 V for an even lower 
on-resistance, achieves the industry's lowest on-resistance of 40 mili-ohm (typ.) for a 
power MOS FET using the CMFPAK-6 or a package of the same size.  Use of these new 
devices will make it possible to develop smaller and lighter portable products, such 
as mobile phones and digital still cameras, that also offer lower power consumption.

The HAT1058C and HAT1059C are available as standard in embossed-taping form, suitable 
for automatic mounting.

Hitachi plans to extend the lineup with the development of an ultra-high-speed model 
with a withstand voltage of less than -20 V, and a series of 20 V to 30 V N-channel 
products.

Notes: 1.  On-resistance: The operating resistance when a power MOS FET is operating.  
           This is the parameter that most affects the performance of a power MOS FET, 
           with a lower on-resistance resulting in higher performance.

       2.  0.5 µm power MOS FET process: Hitachi's 7th-generation power MOS FET 
           process, offering simultaneous improvements in on-resistance, input 
           capacitance, and switching speed.

< Typical Applications>
Small portable products such as mobile phones and digital still cameras

< Specifications >
• Values for Ta = 25°C