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|HITACHI RELEASES INDUSTRYS FASTEST
1-GBIT MULTI LEVEL CELL FLASH MEMORY
Tokyo, July 10, 2002 Hitachi, Ltd. (TSE: 6501) today announced the HN29V1G91 1-Gbit multi level cell*1 flash memory, achieving 10 Mbytes/sec write speed, for large-volume data storage with high speed such as digital moving-image. Sample shipment will begin in October 2002 in Japan.
The HN29V1G91 achieves a write speed of 10 Mbytes/sec--5 times faster
than Hitachi's previous multi level cell flash memory-by using 0.13
process and the development of Hitachi's AG-AND (Assist Gate-AND)*2
next-generation AND type flash memory cell which is offering both
small chip size and fast write speed. HN29V1G91 is suitable for the
storage media of the picture data of high quality digital still cameras
and silicon movies. Also this product will be an effective storage
media of large-volume digital contents combined with broadband such
as moving -picture because of its ability to write 128 Mbytes (1Gbit)
data in approximately 13 seconds.
Data storage flash memory such as AND type flash memory is widely used for the large density storage devices/ cards in a variety of portable products and information products, including not only digital still cameras and portable music players but also digital video cameras, mobile phones, and PDAs. In addition, demand is growing for the use of such flash memory as a replacement of small-capacity HDDs in industrial and telecommunications applications. The most important key point of achieving larger density, smaller size, and competitive cost is realized by finer process and the reduction of chip size by using multi level cells.
However, a problem with multi level cells had been their slow write speed compared with binary cells. While the current write speed of approximately 2 Mbytes/sec has been adequate for digital cameras with around 2 to 3 million pixels, a write speed on the order of 10 Mbytes/sec is necessary for higher pixel counts and various kinds of digital contents distribution using broadband transmission.
To meet this demand for smaller size and faster speed, Hitachi has developed an AG-AND type flash memory cell that enables fast write speed with a multi level cell, and is releasing HN29V1G91 as the industry's fastest 1-Gbit multi level cell flash memory.
[About this Product]
Major features of the HN29V1G91 are summarized below.
(1) Industry's fastest write speed for multi level cell flash
memory of 10 Mbytes/sec
(2) Small chip size
(3) Power-on read function (2Kbyte size)
(4) Cache program function while programming operation, and programming
data input function while erasing operation.
(5) NAND interface
Package is 48-pin TSOP type-I which is the same size as Hitachi's 512-Mbit AND type flash memory.
Future plans include the development of a controller for the HN29V1G91 and development toward use in high-speed flash cards and silicon disks, as well as extension of the lineup of products using AG-AND type flash memory.
[Development Support Tools]
A function description model and C language reference library will be available from October 2002 as support tools for the design of systems using this flash memory.
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|Information contained in this news release is current as of the date of the press announcement, but may be subject to change without prior notice.|
|WRITTEN BY Corporate Communications Division