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Hitachi

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News Release Overview

Date

September 14, 2017

Title

Development of CMOS Integrated Circuit Technology Utilizing Heat- and Radiation-Resistant Silicon Carbide (SiC)

Release Digest


External view of a prototype SiC-CMOS integrated circuit (operational amplifier)

Hitachi today announced the development of CMOS integrated circuit technology that utilizes silicon carbide (SiC), a material that is highly resistant to heat and radiation. This SiC-CMOS technology enables highly-precise signal processing of data sensed in harsh environments, such as those that may be found in the automotive, manufacturing, nuclear power, and aerospace industries.

By combining this technology together with sensors, Hitachi aims to realize the stable operation of highly reliable edge computing across a range of environments.

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