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This paper discusses the development of a high-performance analytical transmission electron microscope (TEM) equipped with a field-emission gun. The TEM supports atomic level observation and elemental micro-analysis using a 0.8-nm electron probe with a probe current of 0.5 nA.
The microscope has been applied to the analysis of advanced devices, which are characterized by nanometer-sized sub-structures. The dependence of bipolar transistor characteristics on the fine structure of the transistors, as well as information concerning the growth mechanism of wire crystals, was confirmed using the TEM.