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Sub-Nanometer Resolution 300-kV Analytical Field-Emission Transmission Electron Microscope

Hisaya Murakoshi, Central Research Laboratory, Hitachi, Ltd.
Mikio Ichihashi, Instrument Division, Hitachi, Ltd.
Hiroshi Kakibayashi, Central Research Laboratory, Hitachi, Ltd.

ABSTRACT

This paper discusses the development of a high-performance analytical transmission electron microscope (TEM) equipped with a field-emission gun. The TEM supports atomic level observation and elemental micro-analysis using a 0.8-nm electron probe with a probe current of 0.5 nA.

The microscope has been applied to the analysis of advanced devices, which are characterized by nanometer-sized sub-structures. The dependence of bipolar transistor characteristics on the fine structure of the transistors, as well as information concerning the growth mechanism of wire crystals, was confirmed using the TEM.


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