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Dynamic Observation of In-Situ Formation and Sintering of SiC Crystals

Takeo Kamino, Hitachi Instruments Engineering Co., Ltd.
Motohide Ukiana, Instrument Division, Hitachi, Ltd.
Yoshiyuki Yasutomi, Hitachi Research Laboratory, Hitachi, Ltd.

ABSTRACT

High-temperature, high-resolution electron microscopy is applied to the in-situ study of formation and sintering of SiC. Observations were carried out at 1500 degrees Celsius with a 300 kV high resolution analytical transmission electron microscope equipped with a direct heating type specimen hot stage.

High-resolution images at near atomic resolution clearly show the structural changes of silicon and carbon during the chemical reaction of SiC, and the SiC crystal growth during sintering.


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