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High-Frequency Semiconductor Devices for Mobile Telecommunication Systems

Chushirou Kusano, Ph. D., Semiconductor & Integrated Circuits Division, Hitachi, Ltd.
Kazuo Sato, Semiconductor & Integrated Circuits Division, Hitachi, Ltd.
Isao Yoshida, Ph. D., Semiconductor & Integrated Circuits Division, Hitachi, Ltd.
Kazuhiko Kawai, Semiconductor & Integrated Circuits Division, Hitachi, Ltd.

ABSTRACT

A selection of high-frequency semiconductor devices for mobile telecommunication systems of 1.8-2.0 GHz have been newly developed.

By employing a new 0.5-micrometer gate structure technology, a 1.9-GHz high-power silicon metal-oxide semiconductor field effect transistor (Si MOSFET) amplifier module provides 2-W output power and a 45% total efficiency at a supply voltage of 4.8 V.

A 1.9-GHz low-noise amplifier gallium arsenide microwave monolithic integrated circuit (GaAs MMIC) packaged MPAK5 achieves 13.5-dB power gain and a 1.9-dB noise figure, at a bias current and supply voltage of 3 mA and 3 V, respectively.

Also a 1.9-GHz antenna switch GaAs MMIC packaged MPAK6 achieves 0.7-dB insertion loss and a 27-dBm output power, at a level of 1-dB gain compression under a single supply voltage operation of 3 V.

Two types of phase-locked loop frequency synthesizer LSI circuits have been designed, by using bipolar complementary metal-oxide semiconductor (Bi-CMOS) technology.

These circuits are dual-modulus pulse swallow type, and include the built-in prescalers of 2 GHz/510 MHz and 1.1 GHz/510 MHz, which respectively show low power consumption and fast lock-up characteristics.


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