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HITACHI REVIEW

Hitachi

CD-SEM Technologies for 65-nm Process Node

AUTHORS

Atsuko Yamaguchi, Dr. Sci. ULSI Research Dept., Solution LSI Research Lab., Central Research Lab., Hitachi, Ltd.
Ryo Nakagaki Image Recognition and Inspection System Dept., Production Engineering Research Lab., Hitachi, Ltd.
Hiroki Kawada Metrology Systems Design Dept., Naka Div., Hitachi High-Technologies Corporation

OVERVIEW

Improved measurement repeatability of new CD-SEM systems for the 65-nm node has increased demand for ways to deal with pattern roughness and other new issues that have emerged as device feature sizes have continued to shrink. Hitachi Group's newest generation CD-SEM developed for the 65-nm node and beyond, is now available. A range of elemental technologies are now under investigation to derive the full performance benefits from the new system and to deal with finer feature size processes.

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RELEVANT SITES

open in new window Hitachi High-Technologies Corporation
open in new window Analysis of Line-edge Roughness in Resist Patterns and Its Transferability as Origins of Device Performance Degradetion and Variation
open in new window Characterization of Line Edge Roughness in Resist Patterns by Using Fourier Analysis and Auto-Correlation Function
open in new window The Hitachi Hyoron (Japanese Only)

KEYWORDS

CD-SEM, precision, repeatability, line edge roughness, line width roughness

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