—Efforts Towards Smart Route-cause Analysis by New Measurement and Analysis Technology—
| Aritoshi Sugimoto | Application Technology Dept., Semiconductor Process Control Systems Sales Div., Semiconductor Equipment Business Gr., |
| Yukio Kembo | Developing and Production Div., |
| Kenji Watanabe, Ph.D. | Naka Application Center, |
| Toshie Yaguchi, Ph.D. | Naka Application Center, |
In recent years, as the structures of semiconductor devices have been successively scaled down in an extreme manner, such devices have become more multi-layered and 3D. Consequently, as conventional measurement methods are becoming impossible to use, the difficulty of simple interpretation is becoming a major problem in defect inspection. As regards wafer-surface unevenness, cross-sectional shape of 3D structures, and breakage and short-circuiting of internal structures—which are all included in this problem—Hitachi High-Technologies Corporation provides solutions through its line-up of measurement, inspection, and analysis equipment. Utilizing specific examples, this report describes the present status of 3D measurement and inspection as well as 3D analysis, and describes the outlook for these technologies.
semiconductor device, LSI, root cause analysis, 3D analysis, AFM, STEM
