| Osamu Nasu | Electronics Systems Design Dept. 1, Naka Div., Design & Manufacturing Gr., |
| Katsuhiro Sasada | Electronics Systems Design Dept. 1, Naka Div., Design & Manufacturing Gr., |
| Mitsuji Ikeda | First Dept., System Research System Unit, Hitachi Research Lab., |
| Makoto Ezumi | Beam Technology Center, Naka Div., Design & Manufacturing Gr., |
With the semiconductor device manufacturing industry moving to the 100-nm node era, CD-SEMs (critical-dimension scanning electron microscopes) need to have further improved CD measurement reproducibility as well as observation performance. In addition, the demand is growing for functionalities applicable to new fabrication processes, such as ArF-resist and low-k insulating-layer processes, which have been developed to achieve higher levels of integration into microstructures. The Hitachi Model S-9260 CD-SEM system has been developed to meet the requirements of these new fabrication processes. Having the following features, it can provide a CD measurement environment suitable for fabricating next-generation semiconductor devices: (1) Excellent observation performance based on the electron optical design common in the S-9000 Series, (2) Enhanced CD measurement reproducibility, throughput, and other basic performance capabilities, (3) Improved process-variation monitoring, (4) Instrument performance maintenance/control support functions, and (5) New process application functions such as those for beam-tilt observations, surface-charged-specimen measurements, and ArF-resist measurements.
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Hitachi High-Technologies Corporation (Japanese Only) |
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Hitachi High-Technologies Corporation |
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The Hitachi Hyoron (Japanese Only) |
CD-SEM, ArF-resist measurement, surface charged-specimen measurement, process-variation monitoring, beam-tilt observation
