HITACHI : "MARORA"—A Plasma Selective-oxidation Apparatus for Metal-gate Devices

Volume 57 Number 3 June 2008

AUTHORS

Tadashi Terasaki	MMT Equipment Engineering Dept., Toyama Works, Semiconductor Equipment Div., Hitachi Kokusai Electric Inc.
Masayuki Tomita	MMT Equipment Engineering Dept., Toyama Works, Semiconductor Equipment Div., Hitachi Kokusai Electric Inc.
Katsuhiko Yamamoto	MMT Equipment Engineering Dept., Toyama Works, Semiconductor Equipment Div., Hitachi Kokusai Electric Inc.
Unryu Ogawa, Dr. Eng.	MMT Equipment Engineering Dept., Toyama Works, Semiconductor Equipment Div., Hitachi Kokusai Electric Inc.
Yoshiki Yonamoto, Dr. Sci.	Dept. of Process Technology Solutions, Production Engineering Research Lab., Hitachi, Ltd.

OVERVIEW

With the need to lower the temperature of semiconductor device processes being evident, plasma processing as an alternative technology to high-temperature processing is being investigated. At Hitachi Kokusai Electric Inc., stealing a lead over our competitors, we have commercialized an apparatus for plasma selective-oxidation — a process that accompanies the adoption of metallic materials for transistor gate electrodes — and installed it on device fabrication lines. An MMT plasma method and a plate-type high-temperature heater are basic technologies used in this selective oxidation. In particular, wafer temperature is increased considerably compared to that for a conventional plasma apparatus, and the interface-state density in the oxide film is decreased by more than 30%. From now onwards, aiming to satisfy our customers' needs, we will continue to vigorously push ahead with equipment and process developments based on these basic technologies and, in doing so, contribute to further evolution of semiconductor devices.

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CONTACT FOR INQUIRY

Semiconductor Equipment Division,
Hitachi Kokusai Electric Inc.
TEL: +81-3-6734-9470
FAX: +81-3-5209-5943

RELEVANT SITE

Semiconductor Manufacturing Systems

KEYWORDS

MMT, selective oxidation, metal gate, plasma

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