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Hitachi Releases P-Channel Power MOSFET with Approximately 40% Reduction | ||
in On-Resistance for Power Control in Products such
as Notebook PCs
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The HAT1072H achieves a low on-resistance of 3.6 milli Ohm(typ.) with a breakdown voltage of -30 V--the industry's best performance--using a small, thin, surface-mount LFPAK (Hitachi package code) package with the same mounting area as an SOP-8, enabling systems to be made smaller and more energy-saving. [Background] Portable information devices such as notebook PCs are provided with power management or similar functions to extend continuous battery drive time, and P-channel power MOSFETs that enable the drive circuitry to be simplified are used as power control switches. With the recent increase in MPU power consumption, large currents also flow in the power MOSFETs, bringing a demand for a significant reduction in on-resistance. In response to this demand as well as the need for compact size essential to portable products, Hitachi has developed the HAT1072H which achieves a low on-resistance through the use of a new process. [About this Product] In the HAT1072H, higher cell density has been achieved through the use of a 0.3 µm process, and cell structure optimization has been implemented to achieve low on-resistance characteristics. In addition, the use of a wireless-construction small, thin, surface-mount LFPAK package (Hitachi package code: 5.3 mm ![]() ![]() Future plans include the development of a product supporting -2.5 V drive with a -20 V breakdown voltage using this process, a greater number of package variations including a thin TSSOP-8 package (Hitachi package code) and an SOP-8 housing two devices, to cater for a wide variety of uses including small motor drive and automotive equipment. < Typical Applications > ![]() ![]() < Price in Japan > *For reference
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WRITTEN BY Corporate Communications Division![]() |