Skip to main content

Hitachi

Corporate InformationResearch & Development

HPSD and Hitachi Commercializes TED-MOS, a Newly Structured SiC Power Device That Balances Durability and Low Power Consumption Features

Contributing to creating a decarbonized society by improving the efficiency and energy saving performance of devices responsible for power generation, transmission, transformation and electrification

News Release Overview

Date

January 26, 2021

Title

HPSD and Hitachi Commercializes TED-MOS, a Newly Structured SiC Power Device That Balances Durability and Low Power Consumption Features

Release Digest

TED-MOS, a Newly Structured SiC Power Device

TED-MOS, a Newly Structured SiC Power Device


Hitachi Power Semiconductor Device, Ltd. today announced that it will begin sample shipments of Trench Etched DMOS-FET (hereinafter referred to as "TED-MOS"), a fin-shaped trench MOSFET from March 2021. This is a new power device product that uses silicon carbide (SiC), next-generation material that enables improved electrical efficiency to deliver power saving in various equipment and facilities that form key social infrastructure such as power systems, railway systems, electric vehicles and data centers.

  • Page top